LL101A Datasheet, PDF (1/2 Pages) Semtech Corporation – Silicon Schottky Barrier Diode for general purpose applications

FEATURES
For general purpose applications
The LL101 series is a Metal-on-silicon junction Schottky barrier device which
is protected by a PN junction guard ring. The low forward voltage drop
and fast switching make it ideal for protection of MOS devices, steering,
biasing, and coupling diodes for fast switching and low logic level applications
These diodes are also available in the DO-35 case with the type
designation SD101A to SD101C.
High temperature soldering guaranteed:260℃/10 seconds at terminals
MECHANICAL DATA
Case: MiniMELF glass case(SOD-80 )
Polarity: Color band denotes cathode end
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
LL101A THUR LL101C
SMALL SIGNAL SCHOTTKY DIODES
MiniMELF
0.142(3.6)
0.134(3.4)
0.063(1.6)
0.055(1.4)
0.019(0.48)
0.011(0.28)
Dimensions in inches and (millimeters)
Peak Reverse Voltage
LL101A
LL101B
LL101C
Power Dissipation (infinite Heat Sink)
Maximum Single cycle surge 10ms square wave
Junction temperature
Storage Temperature Range
1) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Reverse breakover voltage
at IR=10mA
Leakage current at VR=50V
VR=40V
VR=30V
Forward voltage drop at IF=1mA
IF=15mA
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
Junction Capacitance at VR=0V ,f=1MHz
LL101A
LL101B
LL101C
Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR
Symbols
VRRM
VRRM
VRRM
IR
IR
IR
VF
VF
VF
VF
VF
VF
CJ
CJ
CJ
trr
Symbols
VRRM
VRRM
VRRM
Ptot
IFSM
TJ
TSTG
Min.
60
50
40
Value
60
50
40
400 ¹⁾
2.0
125
-55 to+150
Units
V
V
mW
A
C
C
Typ.
Max.
Unis
V
V
V
200
nA
200
nA
nA
200
0.41
V
0.4
V
0.39
V
1
V
0.95
V
0.9
V
2.0
pF
2.1
pF
2.2
pF
1
ns
1