ES2A Datasheet, PDF (1/2 Pages) Jinan Gude Electronic Device – 2.0AMP. SUPER FAST RECOVRY SILICON RECTIFIERS

ES2A THRU ES2J
Surface Mount Efficient Fast Recovery Rectifier
Voltage Range 50 to 600 V
Current 2.0 Ampere
Features
 Fast switching for high efficiency
 Low forward voltage drop
 High current capability
 Low reverse leakage current
 High surge current capability
 Glass passivated chip
Mechanical Data
 Case: Molded plastic SMB/DO-214AA
 Epoxy: UL 94V-0 rate flame retardant
 Terminals: Solderable per MIL-STD-750
method 2026
 Polarity:Color band denotes cathode
 Mounting position: Any
 Weight: 0.093 gram
SMB/DO-214AA
.075(1.91)
.083(2.11)
.130(3.30)
.155(3.94)
.083(2.13)
.096(2.44)
.030(0.76)
.060(1.52)
.160(4.06)
.185(4.70)
.006(.152)
.012(.305)
.002(.051)
.008(.203)
.200(5.08)
.220(5.59)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTIC
SYMBOL ES2A
Maximum Recurrent Peak Reverse Voltage VRRM
50
Maximum RMS Voltage
VRMS
35
Maximum DC Blocking Voltage
VDC
50
Maximum Average Forward Rectified
Current TA=90^oC
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
@ 2.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1)
Trr
Typical junction Capacitance (Note 2)
CJ
Maximum Thermal Resistance (Note 3)
R JA
Operating Junction and Storage
Temperature Range
TJ, TSTG
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to ambient.
1
ES2B
100
70
100
ES2D
200
140
200
2.0
ES2G
400
280
400
60
0.9
1.25
5.0
100
20
25
50
55
-55 to + 150
ES2J UNIT
600
V
420
V
600
V
A
A
1.5
V
uA
uA
50
nS
pF
o_CW
o_C