DB157 Datasheet, PDF (1/2 Pages) Gaomi Xinghe Electronics Co., Ltd. – REVERSE VOLTAGE FORWARD CURRENT

DB 151 thru DB157
REVERSE VOLTAGE - 50 to 1000 Volts
. FORWARD CURRENT - 1.5 Amperes
FEATURES
●Rating to 1000V PRV
●Ideal for printed circuit board
●Low forward voltage drop,high current capability
●Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
●Lead tin Pb/Sn copper
●The plastic material has UL flammability
classification 94V-0
MECHANICAL DATA
●Polarit:As marked on Body
●Weight:0.02 ounces,0.38 gras
●Mounting position:Any
DB
-+
.335(8.5)
.307(7.8)
.256(6.5)
.244(6.2)
~~
.346(8.8)
.323(8.2)
.350(8.9)
.300(7.6)
.134(3.4)
.124(3.15)
.022(0.55)
.018(0.45)
.205(5.2)
.195(5.0)
SPACING
.193(4.9)
.155(3.9)
.059
(1.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL DB151 DB152 DB153 DB154 DB155 DB156 DB157
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TA=40℃
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 1.5A DC
Maximum DC Reverse Current @TJ=25℃
at Rated DC Bolcking Voltage @TJ=125℃
I² t Rating for Fusing(t<8.3ms)
Typical Junction Capacitance Per Element (Note1)
VDC
50
100
200
400
600
800
1000
I(AV)
1.5
IFSM
VF
IR
I²t
CJ
50
1.1
10
500
10.4
25
Tyical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
RθJA
TJ
TSTG
40
-55 to +150
-55 to +150
Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal resistance from junction to ambient mounted on P.C.B.
with 0.5*0.5"(13*13mm) copper pads.
UNIT
V
V
V
A
A
V
uA
A²s
pF
℃/W
℃
℃
1