B5817W Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE

特 性(FEATURES)：
◆ Extremely low V_F.
◆Low stored change,majority carrier conduction.
◆Low power loss/high efficient
◆For Use In Low Voltage, High Frequency Inverters.
◆Free Wheeling, And Polarity Protection Applications.
B5817W-B5819W
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Non-Repetitive Peak reverse voltage
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Reverse Voltage
Symbol
VRSM
V_RRM
VRWM
V_R
B5817W
24
20
B5818W
36
B5819W _Unit
48
V
30
40
V
RMS Reverse Voltage
Average Rectified Output Current
VR(RMS)
14
I_O
21
28
V
1
A
Peak Forward Surge Current @=8.3ms
I_FSM
25
A
Power Dissipation
Thermal Resistance Junction to Ambient
Storage Temperature
P_d
RθjA
T_j,T_stg
250
80
-65 to +125
mW
℃/W
℃