1SS135 Datasheet, PDF (1/2 Pages) Gaomi Xinghe Electronics Co., Ltd. – SMALL SIGNAL SCHOTTKY DIODES

1SS135
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Metal-on-silicon junction, majority carrier conduction
High current capability, Low forward voltage drop
Extremely low reverse current IR
Ultra speed switching characteristics
Small temperature coefficient of forward characteristics
Satisfactory Wave detection efficiency
For use in RECORDER¡TV¡RADIO¡TELEPHONE as detectors,super high
speed switching circuits, small current rectifier
MECHANICAL DATA
Case: Mini-MELF glass case(SOD-80)
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Symblos
VRRM
IF
IFSM
TSTG/TJ
TL
Parameters
Repetitive Peak Reverse Voltage
Forward Continuous Current
TA=25 C
Peak Forward Surge Current(t=1S)
Storage and junction Temperature Range
Maximum Lead Temperature for Soldering during 10S at 4mm from Case
DO-35
0.079(2.0)
MAX
DIA
1.083(27.5)
MIN
0.150(3.8)
MAX
0.020(0.52)
MAX
DIA
1.083(27.5)
MIN
Dimensions in inches and (millimeters)
Value
1SS135
20
30
150
-65 to+125
230
Units
Volts
mA
mA
C
C
ELECTRICAL CHARACTERISTICS
Symblos
Parameters
Test Conditions
Min.
VF
Forward Voltage
IR
Reverse Current
IF=1mA
IF=30mA
IF=200mA
VR=15V
1SS135
1SS135
1SS315
CJ
Junction Capacitance
VR=1V f=1MHz
VR=10V f=1MHz
1SS315
h
Detection Efficiency(See diagram 4) VI=3V f=30MHz CL=10pF RL=3.8kW
trr
RqJA
Reverse Recovery time
Junction Ambient Thermal Resistance
IF=IR=1mA Irr=1mA Rc=100W
Value
Typ.
0.35
0.70
1.0
4.0
60
400
Max.
0.5
1.0
5.0
1
Units
Volts
mA
pF
%
ns
C/W
1