1N5221B Datasheet, PDF (1/2 Pages) Vishay Siliconix – Silicon Z-Diodes

1N5221B...1N5267B
Vishay Telefunken
Silicon Z–Diodes
Features
D Very sharp reverse characteristic
D Very high stability
D Low reverse current level
D V_Z–tolerance ± 5%
Applications
94 9367
Voltage stabilization
Absolute Maximum Ratings
T_j = 25_C
Parameter
Power dissipation
Z–current
Test Conditions
x T_L 75°C
Junction temperature
Storage temperature range
Type
Symbol Value Unit
P_V
500
mW
I_Z
P_V/V_Z
mA
T_j
200
°C
T_stg –65...+200 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Junction ambient
l=9.5mm (3/8”), T_L=constant
Symbol
Value
Unit
R_thJA
300
K/W
Electrical Characteristics
T_j = 25_C
Parameter
Test Conditions
Forward voltage
I_F=200mA
Type
Symbol Min Typ Max Unit
V_F
1.1 V
Dimensions in mm
technical drawings
according to DIN
specifications
94 9366
∅ 1.7 max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3 g
Cathode Identification
26 min.
1
3.9 max.
∅ 0.55 max.
26 min.