1A7 Datasheet, PDF (1/2 Pages) Gaomi Xinghe Electronics Co., Ltd. – 1.0A MINIATURE SILICON RECTIFIER

Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.181 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
1A1 – 1A7
1.0A MINIATURE SILICON RECTIFIER
A
B
A
C
D
R-1
Dim
Min
Max
A
20.0
—
B
2.00
3.50
C
0.53
0.64
D
2.20
2.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol 1A1 1A2 1A3 1A4 1A5 1A6 1A7
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
50
100 200 400 600 800 1000
V
VR
RMS Reverse Voltage
VR(RMS)
35
70
140 280 420 560 700
V
Average Rectified Output Current
(Note 1)
@T_A = 75°C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
30
A
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
VFM
1.0
V
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
5.0
50
µA
Typical Junction Capacitance (Note 2)
Cj
15
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
R
JA
50
K/W
Operating Temperature Range
Tj
-65 to +125
°C
Storage Temperature Range
TSTG
-65 to +150
°C
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.