R1200F Datasheet, PDF (1/2 Pages) Rectron Semiconductor – HIGH VOLTAGE FAST RECOVERY RECTIFIER (VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere)

R1200F THRU R2000F
HIGH VOLTAGE FAST RECOVERY RECTIFIERS
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
VOLTAGE RANGE
1200 to 2000 Volts
CURRENT
500m/200m Ampere
DO-41
.107(2.7)
.080(2.0)
DIA.
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=50 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 0.5A D.C.
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range TJ, TSTG
R1200F
1200
840
1200
R1500F
1500
1050
1500
R1600F
1600
1120
1600
R1800F
1800
1260
1800
500
30
2.0
5.0
100
500
40
-65 +150
NOTES:
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
R2000F UNITS
2000
V
1400
V
2000
V
200
mA
A
3.0
V
A
A
nS
pF
C
510