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UG1A Datasheet, PDF (1/2 Pages) General Semiconductor – ULTRAFAST EFFICIENT PLASTIC RECTIFIER | |||
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UG1A THRU UG1D
ULTRAFAST EFFICIENT
PLASTIC SILICON RECTIFIER
VOLTAGEï¼50 TO 200V
CURRENTï¼ 1.0A
FEATURE
Low power loss
High surge capability
Glass passivated chip junction
Ultra-fast recovery time for high efficiency
High temperature soldering guaranteed
250â/10sec/0.375â³lead length at 5 lbs tension
DO â41\DO-204AL
MECHANICAL DATA
Terminalï¼Plated axial leads solderable per
MIL-STD 202E, method 208C
Caseï¼Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarityï¼color band denotes cathode
Mounting positionï¼any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25â, unless otherwise stated)
SYMBOL
UG
1A
Maximum Recurrent Peak Reverse Voltage
Vrrm
50
Maximum RMS Voltage
Vrms
35
Maximum DC blocking Voltage
Vdc
50
Maximum Average Forward Rectified
Current 3/8â³lead length at Ta =75â
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at Forward current
1A Peak
Maximum DC Reverse Current Ta =25â
at rated DC blocking voltage Ta =125â
If(av)
Ifsm
Vf
Ir
Maximum Reverse Recovery Time (Note 1)
Trr
Typical Junction Capacitance
(Note 2)
Cj
Typical Thermal Resistance
(Note 3)
R(ja)
Storage and Operating Junction Temperature
Tstg,Tj
UG
UG
UG
1B
1C
1D
100
150
200
70
105
140
100
150
200
1.0
40.0
0.95
5.0
200.0
15
7.0
60.0
-55 to +150
Noteï¼
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8â³lead length, P.C. Board Mounted
units
V
V
V
A
A
V
μA
μA
nS
pF
â/W
â
Rev.A4
www.gulfsemi.com
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