SBYT42M Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SINTERED GLASS JUNCTION SURFACE MOUNTED RECTIFIER VOLTAGE: 1000V CURRENT: 1.25A

SBYT42M
SINTERED GLASS JUNCTION
SURFACE MOUNTED RECTIFIER
VOLTAGE: 1000V
CURRENT: 1.25A
FEATURE
High temperature metallurgically bonded construction
Sintered glass cavity free junction
Capability of meeting environmental standard of
MIL-S-19500
High temperature soldering guaranteed
450℃/5sec at terminal
Complete device submersible temperature of
265℃ for 10 seconds in solder bath
Operate at Ta =55°C with no thermal run away
Typical Ir<0.1µA
Fast Soft Recovery Rectifier
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Mark: T42M
GF1/ DO-214BA
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
SBYT42M
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8”lead length at Ta =55°C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage atForward Current
1.0A and 25°C
Maximum DC Reverse Current
at rated DC blocking voltage
Ta =25°C
Ta =150°C
Maximum Reverse Recovery Time (Note 1)
Non repetitive reverse avalanche energy
I_(BR)R=0.4A
Typical Thermal Resistance
(Note 2)
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir
Trr
Er
Rth(ja)
1000
700
1000
1.25
30.0
1.4
5.0
150.0
200
10.0
55.0
Storage and Operating Junction Temperature Tstg, Tj
-65 to +175
Note:
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Thermal Resistance from Junction to Ambient, P.C.B. Mounted on 0.2×0.2″(5.0×5.0mm) copper pad areas
units
V
V
V
A
A
V
µA
nS
mJ
°C /W
°C
Rev.A1
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