SBYG23MG Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SURFACE MOUNT FAST SWITCHING RECTIFIER VOLTAGE：1000V CURRENT：1.5A

SBYG23MG
SURFACE MOUNT FAST
SWITCHING RECTIFIER
VOLTAGE：1000V
CURRENT：1.5A
FEATURE
Ideal for surface mount pick and place application
Low profile package
Built-in strain relief
Low reverse current
Soft recovery characteristics
High temperature soldering guaranteed
260℃/10sec/at terminals
Glass passivated chip
Fast reverse recovery time
SMA／DO-214AC
MECHANICAL DATA
Terminal：Plated axial leads solderable per
MIL-STD 202E, method 208C
Case：Molded with UL-94 class V-0 recognized Flame
Retardant Epoxy
Polarity：Color band denotes cathode
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated,
for capacitive load, date current by 20％)
SYMBOL
SBYG23MG
Maximum Recurrent Peak Reverse Voltage
Vrrm
1000
Maximum RMS Voltage
Vrms
700
Maximum DC blocking Voltage
Vdc
1000
Reverse Breakdown Voltage at IR = 100µA
Maximum Average Forward Rectified
V_(BR)R
If(av)
1000min
1.5
Peak Forward Surge Current 8.3ms single
Ifsm
50.0
half sine- wave superimposed on rated load
Maximum Instantaneous Forward Voltage at
Vf
1.7
Forward Current 1.0A
Maximum DC Reverse Current
at rated DC blocking voltage
Tj =25℃
Tj =100℃
Ir
5.0
50.0
Maximum Reverse Recovery Time
(Note1 )
Trr
75
Pulse energy in avalanche mode,
Ersm
20
non repetitive(inductive load switch off) (Note 2)
Typical Thermal Resistance
(Note 3) Rth(jl)
25.0
(Note 4) Rth(ja)
150
Storage and Operating Junction Temperature
Tstg, Tj
-50 to +150
Note：
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. I(BR)R=1.0A, Tj=25℃
3. T_L=const.
4. Thermal Resistance from Junction to terminal mounted on epoxy-glass hard tissue, 17mm² 35μm Cu
Rev.A1
units
V
V
V
V
A
A
V
µA
nS
mJ
K/W
℃
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