RGP10M-E Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE: 1000V CURRENT: 1.0A

RGP10M-E
SINTERED GLASS JUNCTION
FAST SWITCHING PLASTIC RECTIFIER
VOLTAGE: 1000V
CURRENT: 1.0A
FEATURE
High temperature metallurgically bonded construction
Sintered glass cavity free junction
Capability of meeting environmental standard of MIL-S-19500
High temperature soldering guaranteed
350°C /10sec/0.375”lead length at 5 lbs tension
Operate at Ta =55°C with no thermal run away
Typical Ir<0.1µA
Halogen Free
DO-41\DO-204AL
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Halogen
Free Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
RGP10M-E
Maximum Recurrent Peak Reverse Voltage
Vrrm
1000
Maximum RMS Voltage
Vrms
700
Maximum DC blocking Voltage
Vdc
1000
Maximum Average Forward Rectified Current
3/8”lead length at Ta =55°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
Maximum Forward Voltage at rated Forward
Current and 25°C
Maximum full load reverse current full cycle
average at 55°C Ambient
Maximum DC Reverse Current
at rated DC blocking voltage
Ta =25°C
Ta =150°C
If(av)
Ifsm
Vf
Ir(av)
Ir
1.0
30.0
1.3
100.0
5.0
200.0
Maximum Reverse Recovery Time
(Note 1)
Trr
500
Typical Junction Capacitance
(Note 2)
Cj
15.0
Typical Thermal Resistance
(Note 3) Rth(ja)
55.0
Storage and Operating Junction Temperature
Tstg, Tj
-65 to +175
Note:
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
Rev.A1
units
V
V
V
A
A
V
µA
µA
nS
pF
°C /W
°C
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