RG10 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SUPER FAST RECTIFIER DIODES

RG10
ULTRAFAST EFFICIENT
PLASTIC SILICON RECTIFIER
VOLTAGE：400V
CURRENT： 1.5A
FEATURE
Low power loss
High surge capability
Glass passivated chip junction
Ultra-fast recovery time for high efficiency
High temperature soldering guaranteed
250℃/10sec/0.375″lead length at 5 lbs tension
MECHANICAL DATA
Terminal：Plated axial leads solderable per
MIL-STD 202E, method 208C
Case：Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity：color band denotes cathode
Mounting position：any
DO-15/DO-204AC
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated)
SYMBOL
RG10
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified Current 3/8″lead
length at Ta =50℃
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load
Maximum Forward Voltage at Forward current
Maximum DC Reverse Current
at rated DC blocking voltage
Ta =25℃
Ta =125℃
Maximum Reverse Recovery Time
(Note 1)
Typical Junction Capacitance
(Note 2)
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir
Trr
Cj
400
280
400
1.5
50.0
1.1
5.0
200.0
50
15
Typical Thermal Resistance
(Note 3) Rth(ja)
45
Storage and Operating Junction Temperature
Tstg,Tj
-55 to +150
Note：
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8″lead length, P.C. Board Mounted
Rev.A1
units
V
V
V
A
A
V
µA
nS
pF
℃/W
℃
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