MURS105 Datasheet, PDF (1/2 Pages) Gulf Semiconductor – ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE:50 TO 600V CURRENT: 1.0A

MURS105 THRU MURS160
ULTRAFAST EFFICIENT
GLASS PASSIVATED RECTIFIER
VOLTAGE:50 TO 600V
CURRENT: 1.0A
FEATURE
Ultrafast Nanosecond Recovery Times
150°C Operating Junction Temperature
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
SMB／DO-214AA
Mechanical Characteristics
Case: JEDEC SMB/DO-214AA molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750, Method
2026
Polarity: Color band denotes cathode end
Mark: M105B M110B M120B M130B M140B M160B
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
Maximum Recurrent Peak Reverse Voltage
SYMBOL
Vrrm
MURS
105
50
MURS
110
100
MURS
120
200
MURS
130
300
Maximum RMS Voltage
Vrms
35
70
140
210
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8”lead length at TL =125°C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at rated Forward
Current and 25°C
Maximum DC Reverse Current Ta =25°C
at rated DC blocking voltage Ta =125°C
Maximum Reverse Recovery Time (Note 1)
Vdc
If(av)
Ifsm
Vf
Ir
Trr
50
100
200
300
1.0
40
0.875
10
150
25
Typical Junction Capacitance
(Note 2)
Cj
25
Typical Thermal Resistance
(Note 3) Rth(jl)
13
Storage and Operating Temperature Range
Tstg, Tj
-55 to +150
Note:
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
MURS
140
400
280
400
35
1.25
MURS
160
600
420
600
units
V
V
V
A
A
V
µA
50
nS
pF
°C /W
°C
Rev.A1
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