MUR105S Datasheet, PDF (1/3 Pages) Gulf Semiconductor – ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER Voltage: 50 to 1000V Current: 1.0A

MUR105S THRU MUR1100S
ULTRAFAST EFFICIENT
PLASTIC SILICON RECTIFIER
Voltage: 50 to 1000V
Current: 1.0A
FEATURE
Low power loss
High surge capability
Glass passivated chip junction
Ultra-fast recovery time for high efficiency
High temperature soldering guaranteed
250℃/10sec/0.375″lead length at 5 lbs tension
DO – 41\DO – 204AL
MECHANICAL DATA
Terminal：Plated axial leads solderable per
MIL-STD 202E, method 208C
Case：Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity：color band denotes cathode
Mounting position：any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,
for capacitive load, derate current by 20%)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8" lead length at Ta =55°C
Peak Forward Surge Current 8.3ms single
Half sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage at
Rated forward current
Maximum DC Reverse Current Ta =25°C
At rated DC blocking voltage Ta =125°C
Maximum Reverse Recovery Time (Note 1)
Symbol
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir
Trr
MUR
105S
50
35
50
MUR
110S
100
70
100
MUR
120S
200
140
200
MUR
130S
300
MUR
140S
400
210 280
300 400
1.0
MUR
160S
600
420
600
MUR
180S
800
560
800
MUR
1100S
1000
700
1000
units
V
V
V
A
35.0
A
0.875
25
1.25
10.0
100.0
50
1.75
V
µA
75
nS
Typical Junction Capacitance
(Note 2)
Cj
25
pF
Typical Thermal Resistance
(Note 3) Rth(ja)
27
50
℃
/W
Storage and Operating Junction
Temperature
Tstg, Tj
-55 to +150
°C
Note:
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8″lead length, P.C. Board Mounted