HER101G Datasheet, PDF (1/2 Pages) Jinan Gude Electronic Device – 1.0 AMP. GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS

HER101G THRU HER108G
ULTRAFAST EFFICIENT
GLASS PASSIVATED RECTIFIER
VOLTAGE：50 TO 1000V
CURRENT： 1.0A
FEATURE
Low power loss
High surge capability
Glass passivated chip junction
Ultra-fast recovery time for high efficiency
High temperature soldering guaranteed
250℃/10sec/0.375″lead length at 5 lbs tension
DO-41/DO-204AL
MECHANICAL DATA
Terminal：Plated axial leads solderable per
MIL-STD 202E, method 208C
Case：Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity：color band denotes cathode
Mounting position：any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated)
SYMBOL HER ^{HER HER HER HER HER HER HER}
101G ^{102G 103G 104G 105G 106G 107G 108G}
units
Maximum Recurrent Peak Reverse Voltage
Vrrm 50 100 _{200 300 400 600 800 1000} V
Maximum RMS Voltage
Vrms 35 70 _{140 210 280 420 560 700}
V
Maximum DC blocking Voltage
Vdc
50 100 _{200 300 400 600 800 1000} V
Maximum Average Forward Rectified
Current 3/8″lead length at Ta =65℃
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at Forward current
1.0A Peak
Maximum DC Reverse Current Ta =25℃
at rated DC blocking voltage Ta =125℃
If(av)
Ifsm
Vf
Ir
1.0
30
1.0
10.0
100.0
A
A
1.7
V
μA
μA
Maximum Reverse Recovery Time (Note 1)
Trr
50
75
nS
Typical Junction Capacitance
(Note 2)
Cj
20
15
pF
Typical Thermal Resistance
(Note 3)
Rth(ja)
Rth(jl)
68
18
℃/W
Storage and Operating Junction Temperature
Tstg,Tj
-55 to +150
℃
Note：
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8″lead length, P.C. Board Mounted
Rev.A1
www.gulfsemi.com
RATINGS AND CHARACTERISTIC CURVES HER101G THRU HER108G