GUFB30M Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SINTERED GLASS JUNCTION PLASTIC RECTIFIER VOLTAGE: 1000V CURRENT: 3.0A

GUFB30M
SINTERED GLASS JUNCTION
PLASTIC RECTIFIER
VOLTAGE: 1000V
CURRENT: 3.0A
FEATURE
G-3
High temperature metallurgically bonded construction
Sintered glass cavity free junction
Capability of meeting environmental standard of
MIL-S-19500
High temperature soldering guaranteed
350°C /10sec/0.375”lead length at 5 lbs tension
Operate at Ta =55°C with no thermal run away
Typical Ir<0.1µA
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,
for capacitive load, derate current by 20%)
SYMBOL
GUFB30M
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified Current 3/8”lead
length at Ta =55°C
Peak Forward Surge Current 8.3ms single Half sine-
wave superimposed on rated load
Maximum Instantaneous Forward Voltage at 9.0A
Maximum DC Reverse Current
at rated DC blocking voltage
Maximuml Reverse Recovery Time
Ta =25°C
Ta =150°C
(Note 1)
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir
Trr
1000
700
1000
3.0
80.0
1.70
10.0
100.0
75
Typical Junction Capacitance
(Note 2)
Cj
40.0
Typical Thermal Resistance
(Note 3) Rth(ja)
20.0
Storage and Operating Junction Temperature
Tstg, Tj
Note:
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
-65 to +175
units
V
V
V
A
A
V
µA
nS
pF
°C /W
°C
Rev.A1
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