GP10T Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SINTERED GLASS JUNCTION PLASTIC RECTIFIER VOLTAGE:1300V CURRENT: 1.0A

GP10T
SINTERED GLASS JUNCTION
PLASTIC RECTIFIER
VOLTAGE:1300V
CURRENT: 1.0A
FEATURE
High temperature metallurgically bonded construction
Sintered glass cavity free junction
Capability of meeting environmental standard of
MIL-S-19500
High temperature soldering guaranteed
350°C /10sec/0.375”lead length at 5 lbs tension
Operate at Ta =55°C with no thermal run away
Typical Ir<0.1µA
DO-41\DO-204AL
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,
for capacitive load, derate current by 20%)
SYMBOL
GP10T
Maximum Recurrent Peak Reverse Voltage
Vrrm
1300
Maximum RMS Voltage
Vrms
910
Maximum DC blocking Voltage
Vdc
1300
Maximum Average Forward Rectified Current _If(av)
1.0
3/8”lead length
Peak Forward Surge Current 8.3ms single half sine-
Ifsm
25.0
wave superimposed on rated load
Maximum Instantaneous Forward Voltage at 1.0A
Vf
1.3
Maximum full load reverse current full cycle _Ir(av)
30.0
Average at 75°C
Maximum DC Reverse Current
Ta =25°C
Ir
5.0
at rated DC blocking voltage
Ta =125°C
50.0
Typical Reverse Recovery Time
(Note 1)
Trr
2.0
Typical Junction Capacitance
(Note 2)
Cj
5.0
Typical Thermal Resistance
(Note 3) Rth(ja)
55.0
Storage and Operating Junction Temperature
Tstg, Tj
-65 to +150
Note:
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
units
V
V
V
A
A
V
µA
µA
µS
PF
°C /W
°C
Rev.A1
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