G3B Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SINTERED GLASS JUNCTION RECTIFIER VOLTAGE: 100V to 800V CURRENT: 3.0A

G3B THRU G3K
SINTERED GLASS JUNCTION
RECTIFIER
VOLTAGE: 100V to 800V
CURRENT: 3.0A
FEATURE
G-3
High temperature metallurgically bonded construction
Sintered glass cavity free junction
High temperature soldering guaranteed
350°C /10sec/0.375”lead length at 5 lbs tension
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: G-3 sintered glass case
Polarity: color band denotes cathode
Mounting position: any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,
for capacitive load, derate current by 20%)
SYMBOL
G3B
G3J
G3K
units
Maximum Recurrent Peak Reverse Voltage
Vrrm
100
600
800
V
Maximum RMS Voltage
Vrms
70
420
560
V
Maximum DC blocking Voltage
Vdc
100
600
800
V
Maximum Average Forward Rectified Current 3/8”lead
length at Ta =70°C
If(av)
3.0
A
Peak Forward Surge Current 8.3ms single
Ifsm
Half sine-wave superimposed on rated load
125.0
A
Maximum Instantaneous Forward Voltage at 3.0A
Vf
1.2
1.1
V
Maximum Full Load Reverse Current Full Cycle
Average at 70°C
Maximum DC Reverse Current
at rated DC blocking voltage
Ta =25°C
Ta =150°C
Ir(av)
Ir
200.0
µA
5.0
100.0
µA
Typical Reverse Recovery Time
(Note 1)
Trr
3.0
µS
Typical Junction Capacitance
(Note 2)
Cj
40.0
pF
Typical Thermal Resistance
(Note 3)
Rth(ja)
Rth(jl)
20.0
10.0
°C /W
Storage and Operating Junction Temperature
Tstg, Tj
-65 to +175
°C
Note:
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient and from Junction to Lead at 3/8”lead length, with both leads mounted between
heatsinks
Rev.A1
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