FR101G-E Datasheet, PDF (1/2 Pages) Gulf Semiconductor – FAST RECOVERY GLASS PASSIVATED RECTIFIER VOLTAGE: 50 to 1000V CURRENT: 1.0A

FR101G-E THRU FR107G-E
FAST RECOVERY
GLASS PASSIVATED RECTIFIER
VOLTAGE: 50 to 1000V
CURRENT: 1.0A
FEATURE
Molded case feature for auto insertion
High current capability
Low leakage current
High surge capability
High temperature soldering guaranteed
Fast switching for high efficiency
Glass passivated junction
Halogen Free
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Halogen Free
Epoxy
Polarity: color band denotes cathode
Mounting position: any
DO- 41\DO-204AL
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
Maximum Recurrent Peak Reverse Voltage
SYMBOL
Vrrm
FR10
1G-E
50
FR10
2G-E
100
FR10
3G-E
200
FR10
4G-E
400
FR10
5G-E
600
Maximum RMS Voltage
Vrms
35
70 _{140 280 420}
Maximum DC blocking Voltage
Vdc
50 100 _{200 400 600}
Maximum Average Forward Rectified Current
3/8”lead length at Ta =75°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
Maximum Forward Voltage at rated Forward
Current and 25°C
Maximum DC Reverse Current
Ta =25℃
at rated DC blocking voltage
Ta =100℃
If(av)
Ifsm
Vf
Ir
1.0
30.0
1.3
5.0
100.0
Maximum Reverse Recovery Time
(Note 1)
Trr
150
250
Typical Junction Capacitance
(Note 2)
Cj
15.0
Typical Thermal Resistance
(Note 3) Rth(ja)
50.0
Storage and Operating Junction Temperature
Tstg,Tj
-50 to +150
Note:
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 0.375”lead length, P.C. Board Mounted
FR10
6G-E
800
560
800
FR10
7G-E
1000
700
1000
500
units
V
V
V
A
A
V
µA
nS
pF
℃/W
℃
Rev.A1
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