EU2BGF Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SINTERED GLASS JUNCTION ULTRA FAST SWITCHING RECTIFIER VOLTAGE:100 TO 600V CURRENT: 1.0A

EU2BGF THRU EU2JGF
SINTERED GLASS JUNCTION
ULTRA FAST SWITCHING RECTIFIER
VOLTAGE:100 TO 600V
CURRENT: 1.0A
FEATURE
High temperature metallurgically bonded construction
Sintered glass cavity free junction
Capability of meeting environmental standard of
MIL-S-19500
High temperature soldering guaranteed
350°C /10sec/0.375”lead length at 5 lbs tension
Operate at Ta =55°C with no thermal run away
Typical Ir<0.2µA
Low power loss, high efficient
DO-41
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL _EU2BGF
EU2DGF
EU2GGF
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8”lead length at Ta =55°C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at rated Forward
Current and 25°C
Maximum DC Reverse Current Ta =25°C
at rated DC blocking voltage Ta =125°C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance
(Note 2)
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir
Trr
Cj
100
70
100
1.2
0.9 (IF=1.2A)
50
200
400
140
280
200
400
1.0
30
1.4 (IF=1.0A)
10
50
75
17
Typical Thermal Resistance
(Note 3)
R(ja)
50
Storage and Operating Temperature Range
Tstg, Tj
-65 to +175
Note:
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
EU2JGF
600
420
600
15
60
units
V
V
V
A
A
V
µA
µA
nS
pF
°C
/W
°C
Rev.A5
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