EU1DG Datasheet, PDF (1/2 Pages) Gulf Semiconductor – ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE: 200V CURRENT: 1.0A

EU1DG
ULTRAFAST EFFICIENT
PLASTIC SILICON RECTIFIER
VOLTAGE: 200V
CURRENT: 1.0A
FEATURE
Low power loss
High surge capability
Glass passivated chip junction
Ultra-fast recovery time for high efficiency
High temperature soldering guaranteed
250℃/10sec/0.375″lead length at 5 lbs tension
DO-41\DO-204AL
MECHANICAL DATA
Terminal：Plated axial leads solderable per
MIL-STD 202E, method 208C
Case：Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity：color band denotes cathode
Mounting position：any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
EU1DG
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8”lead length at Ta =55°C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at rated Forward
Current and 25°C
Maximum full load reverse current full cycle
average at 55°C Ambient
Maximum DC Reverse Current Ta =25°C
at rated DC blocking voltage Ta =125°C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance
(Note 2)
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir(av)
Ir
Trr
Cj
200
140
200
1.0
30
1.1
50
10.0
100.0
50
17
Typical Thermal Resistance
(Note 3)
Rth(ja)
50
Storage and Operating Temperature Range
Tstg, Tj
-55 to +150
Note:
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
Rev.A1
units
V
V
V
A
A
V
µA
µA
µA
nS
pF
°C
/W
°C
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