ES1D-E Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE：200V CURRENT： 1.0A

ES1D-E
SURFACE MOUNT FAST
ULTRAFAST RECTIFIER
VOLTAGE：200V
CURRENT： 1.0A
FEATURE
Ideal for surface mount pick and place application
Low profile package
Built-in strain relief
High surge capability
High temperature soldering guaranteed
260℃/10sec/at terminals
Glass passivated chip
Ultrafast recovery time for high efficiency
Halogen Free
SMA／DO-214AC
MECHANICAL DATA
Terminal: Solder plated, solderable per MIL-STD-750,
Method 2026
Case: JEDEC DO-214AC molded plastic body over
passivated chip
Polarity: Color band denotes cathode
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated,
for capacitive load, derate current by 20％)
SYMBOL
ES1D-E
Maximum Recurrent Peak Reverse Voltage
Vrrm
Maximum RMS Voltage
Vrms
Maximum DC blocking Voltage
Vdc
Maximum Average Forward Rectified Current
3/8″lead length at TL =110℃
Peak Forward Surge Current 8.3ms single half
sine- wave superimposed on rated load
Maximum Forward Voltage at rated forward
current
If(av)
Ifsm
Vf
Maximum DC Reverse Current
at rated DC blocking voltage
Ta =25℃
Ta =125℃
Ir
Maximum Reverse Recovery Time
(Note1 )
Trr
Typical Junction Capacitance
(Note 2)
Cj
Typical Thermal Resistance
(Note 3) Rth(jl)
Storage and Operating Junction Temperature
Tstg, Tj
Note：
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to terminal mounted on 5×5mm copper pad area
200
140
200
1.0
30.0
0.92
10.0
100.0
15
18.0
30.0
-50 to +150
units
V
V
V
A
A
V
µA
nS
pF
℃ /W
℃
Rev.A1
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