ERB12JGP Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SINTERED GLASS JUNCTION PLASTIC RECTIFIER

ERB12JGP
SINTERED GLASS JUNCTION
PLASTIC RECTIFIER
VOLTAGE: 600V
CURRENT: 2.0A
FEATURE
High temperature metallurgically bonded construction
Sintered glass cavity free junction
Capability of meeting environmental standard of
MIL-S-19500
High temperature soldering guaranteed
350°C /10sec/0.375”lead length at 5 lbs tension
Operate at Ta =55°C with no thermal run away
Typical Ir<0.1µA
DO-15\DO-204AC
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,
for capacitive load, derate current by 20%)
SYMBOL
ERB12JGP
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8”lead length at Ta =55°C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage at
2.0A
Maximum full load reverse current full cycle
Average at 55°C
Maximum DC Reverse Current Ta =25°C
at rated DC blocking voltage
Typical Reverse Recovery Time (Note 1)
Typical Junction Capacitance
(Note 2)
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir(av)
Ir
Trr
Cj
600
420
600
2.0
65.0
1.1
100.0
5.0
2.5
40.0
Typical Thermal Resistance
(Note 3)
R(ja)
25.0
Storage and Operating Junction Temperature
Tstg, Tj
-65 to +175
Note:
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
units
V
V
V
A
A
V
µA
µA
µS
PF
°C
/W
°C
Rev.A1
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