ERA10MEGF Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE: 1000V CURRENT: 1.0A

ERA10MEGF
SINTERED GLASS JUNCTION
FAST SWITCHING PLASTIC RECTIFIER
VOLTAGE: 1000V
CURRENT: 1.0A
FEATURE
High temperature metallurgically bonded construction
Sintered glass cavity free junction
Capability of meeting environmental standard of
MIL-S-19500
High temperature soldering guaranteed
350°C /10sec/0.375”lead length at 5 lbs tension
Operate at Ta =55°C with no thermal run away
Typical Ir<0.2µA
Low power loss, high efficient
A-405
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
ERA 10M EGF
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8”lead length at Ta =55°C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at rated Forward
Current and 25°C
Maximum full load reverse current full cycle
average at 55°C Ambient
Maximum DC Reverse Current Ta =25°C
at rated DC blocking voltage Ta =125°C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance
(Note 2)
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir(av)
Ir
Trr
Cj
1000
700
1000
1.0
30
1.7
50
10
50
75
15
Typical Thermal Resistance
(Note 3)
R(ja)
60
Storage and Operating Temperature Range
Tstg, Tj
-65 to +175
Note:
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
Rev.A2
units
V
V
V
A
A
V
µA
µA
µA
nS
pF
°C
/W
°C
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