BYV36E Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE: 1000V CURRENT: 1.5A

BYV36E
SINTERED GLASS JUNCTION
FAST AVALANCHE RECTIFIER
VOLTAGE: 1000V
CURRENT: 1.5A
FEATURE
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
SOD-57
MECHANICAL DATA
Case: SOD-57 sintered glass case
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Polarity: color band denotes cathode end
Mounting position: any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
BYV36E
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Reverse Breakdown Voltage
at IR =0. 1mA
Maximum Average Forward Rectified Current
at Ttp=60°C, lead length=10mm
Peak Forward Surge Current at t=10ms half sinewave
VRRM
VRMS
VDC
V(BR)R
IF(AV)
IFSM
1000
700
1000
1100min
1.5
30
Maximum Forward Voltage at rated Forward
Current and 25°C
IF = 1.0A
Maximum DC Reverse Current
at rated DC blocking voltage
Tj = 25°C
Tj = 150°C
Maximum Reverse Recovery Time
(Note 1)
Non Repetitive Reverse Avalanche Energy
at L=120mH
Typical Diode Capacitance at f=1MHz,VR=0V
Typical Thermal Resistance
(Note 2)
Storage and Operating Junction Temperature
VF
IR
Trr
ER
Cd
Rth(ja)
Tstg, Tj
1.45
5.0
150
150
10
40
100
-65 to +175
Note:
1. Reverse Recovery Condition IF = 0.5A, IR = 1.0A, IRR = 0.25A
2. Device mounted on an epoxy-glass printed-circuit boars, 1.5mm thick; thichness of Cu-layer≥40μm
Rev.A1
units
V
V
V
V
A
A
V
µA
µA
nS
mJ
pF
K/W
℃
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