BYV36C Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE: 600V CURRENT: 1.6A

BYV36C
SINTERED GLASS JUNCTION
FAST AVALANCHE RECTIFIER
VOLTAGE: 600V
CURRENT: 1.6A
FEATURE
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
SOD-57
MECHANICAL DATA
Case: SOD-57 sintered glass case
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Polarity: color band denotes cathode end
Mounting position: any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
BYV36C
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Reverse Breakdown Voltage
at IR =0. 1mA
Maximum Average Forward Rectified Current
at Ttp=60°C, lead length=10mm
Peak Forward Surge Current at t=10ms half
sinewave
Maximum Forward Voltage at rated Forward
Current and 25°C
IF = 1.0A
Maximum DC Reverse Current
at rated DC blocking voltage
Tj = 25°C
Tj = 165°C
Maximum Reverse Recovery Time
(Note 1)
Non Repetitive Reverse Avalanche Energy
at L=120Mh
Typical Diode Capacitance at f=1MHz,VR=0V
Typical Thermal Resistance
(Note 2)
Storage and Operating Junction Temperature
VRRM
VRMS
VDC
V(BR)R
IF(AV)
IFSM
VF
IR
Trr
ER
Cd
Rth(ja)
Tstg, Tj
600
420
600
700min
1.6
30
1.35
5.0
150
100
10
45
100
-65 to +175
Note:
1. Reverse Recovery Condition IF = 0.5A, IR = 1.0A, IRR = 0.25A
2. Device mounted on an epoxy-glass printed-circuit boars, 1.5mm thick; thichness of Cu-layer≥40μm
Rev.A1
units
V
V
V
V
A
A
V
µA
µA
nS
mJ
pF
K/W
℃
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