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BYV27-400 Datasheet, PDF (1/2 Pages) Gulf Semiconductor – GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT SILICON RECTIFIER VOLTAGE:400V CURRENT: 2.0A
BYV27-400
GLASS PASSIVATED JUNCTION
ULTRAFAST EFFICIENT SILICON RECTIFIER
VOLTAGE:400V
CURRENT: 2.0A
FEATURE
Low power loss
High surge capability
Glass passivated chip junction
Ultra-fast recovery time for high efficiency
High temperature soldering guaranteed
250℃/10sec/0.375″lead length at 5 lbs tension
DO-15/DO-204AC
MECHANICAL DATA
Terminal:Plated axial leads solderable per
MIL-STD 202E, method 208C
Case:Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity:color band denotes cathode
Mounting position:any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Vrrm
Maximum RMS Voltage
Vrms
Maximum DC blocking Voltage
Maximum Average Forward Rectified Current 3/8″lead
length at Ta =55℃
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load
Maximum Forward Voltage at Forward current and 25℃
Vdc
If(av)
Ifsm
Vf
Non-repetitive peak reverse avalanche energy (Note 1)
Ersm
Maximum DC Reverse Current
at rated DC blocking voltage
Ta =25℃
Ta =125℃
Ir
Maximum Reverse Recovery Time
(Note 2)
Trr
Typical Junction Capacitance
(Note 3)
Cj
Typical Thermal Resistance
(Note 4)
Rth(ja)
Storage and Operating Junction Temperature
Tstg,Tj
Note:
1. L = 120 mH; Tj = Tj max prior to surge; inductive load switched off.
2. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
3. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
4. 4. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
Rev.A1
BYV27-400
400
280
400
2.0
50.0
1.05
20
5.0
150.0
50
50
20
-55 to +150
units
V
V
V
A
A
V
mJ
µA
nS
pF
℃ /W
℃
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