BYV27-1GE Datasheet, PDF (1/2 Pages) Gulf Semiconductor – GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT SILICON RECTIFIER VOLTAGE：100 TO 200V CURRENT： 2.0A

BYV27-1GE THRU BYV27-2GE
GLASS PASSIVATED JUNCTION
ULTRAFAST EFFICIENT SILICON RECTIFIER
VOLTAGE：100 TO 200V
CURRENT： 2.0A
FEATURE
Low power loss
High surge capability
Glass passivated chip junction
Ultra-fast recovery time for high efficiency
High temperature soldering guaranteed
250℃/10sec/0.375″lead length at 5 lbs tension
DO-15/DO-204AC
MECHANICAL DATA
Terminal：Plated axial leads solderable per
MIL-STD 202E, method 208C
Case：Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity：color band denotes cathode
Mounting position：any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated)
SYMBOL
BYV27-1GE
BYV27-2GE
units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8″lead length at Ta =55℃
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at Forward current
2.0A Peak
non-repetitive peak reverse avalanche energy
Maximum DC Reverse Current Ta =25℃
at rated DC blocking voltage Ta =125℃
Maximum Reverse Recovery Time
Typical Junction Capacitance
Typical Thermal Resistance
Storage and Operating Junction Temperature
(Note 1)
(Note 2)
(Note 3)
(Note 4)
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ersm
Ir
Trr
Cj
R(ja)
Tstg,Tj
100
70
100
2.0
50.0
0.98
20
5.0
150.0
25
15
45
-55 to +150
Note: 1.L = 120 mH; Tj = Tj max prior to surge; inductive load switched off.
2.Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
3.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
4.Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
Rev.A1
200
V
140
V
200
V
A
A
V
mJ
μA
μA
nS
pF
℃/W
℃
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