BYV26F Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE：1200V CURRENT: 1.05A

BYV26F
SINTERED GLASS JUNCTION
FAST AVALANCHE RECTIFIER
VOLTAGE：1200V
CURRENT: 1.05A
FEATURE
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
SOD-57
MECHANICAL DATA
Case: SOD-57 sintered glass case
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Polarity: color band denotes cathode end
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC blocking Voltage
VDC
Reverse avalanche breakdown voltage
IR = 0.1 mA
Maximum Average Forward Rectified
Current 3/8”lead length at Ttp =85°C
Non-repetitive Peak Forward Current at t=10ms half
sine wave
Maximum Forward Voltage at 1.0A
V(BR)R
IFAV
IFSM
VF
Non-repetitive peak reverse avalanche energy
(Note 1)
ERSM
Maximum DC Reverse Current
at rated DC blocking voltage
Ta =25°C
Ta =165°C
IR
Maximum Reverse Recovery Time
(Note 2)
Trr
Diode Capacitance
(Note 3)
Cd
Typical Thermal Resistance
(Note 4)
Rth(ja)
Storage and Operating Junction Temperature
Tstg, Tj
Note:
1. IR=400mA; Tj=Tjmax prior to surge; inductive load switched off
2. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
3. Measured at 1.0 MHz and applied reverse voltage of 0Vdc
4. Device mounted on an epoxy-glass printed-circuit board, 1.5mm thick
Rev.A1
BYV26F
1200
910
1200
1300min
1.05
30
2.15
10
5.0
150.0
150
35
100
-65 to +175
units
V
V
V
V
A
A
V
mJ
µA
µA
nS
pF
K/W
°C
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