BYM36E Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE：1000V CURRENT: 3.0A

BYM36E
SINTERED GLASS JUNCTION
FAST AVALANCHE RECTIFIER
VOLTAGE：1000V
CURRENT: 3.0A
FEATURE
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
SOD-64
MECHANICAL DATA
Case: SOD-64 sintered glass case
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Polarity: color band denotes cathode end
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Reverse avalanche breakdown voltage
at IR = 0.1 mA
Maximum Average Forward Rectified
Current 3/8”lead length at Ttp =55°C
Peak Forward Surge Current at Tp=10ms half
sinewave
Maximum Forward Voltage at rated Forward Current
Non-repetitive peak reverse avalanche energy
(Note 1)
Maximum DC Reverse Current
at rated DC blocking voltage
Ta =25°C
Ta =165°C
Maximum Reverse Recovery Time
(Note 2)
V_RRM
V_RMS
V_DC
V_(BR)R
I_FAV
I_FSM
V_F
E_RSM
I_R
Trr
Diode Capacitance
(Note 3)
Typical Thermal Resistance
(Note 4)
Storage and Operating Junction Temperature
C_d
R_th(ja)
Tstg, Tj
Note:
1. IR=400mA; Tj=Tjmax prior to surge; inductive load switched off
2. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
3. Measured at 1.0 MHz and applied reverse voltage of 0Vdc
4. Device mounted on an epoxy-glass printed-circuit board, 1.5mm thick
Rev.A1
BYM36E
1000
700
1000
1100min
3.0
65
1.78
10
5.0
150.0
150
75
75
-65 to +175
units
V
V
V
V
A
A
V
mJ
µA
µA
nS
pF
°C /W
°C
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