1N5400GM Datasheet, PDF (1/2 Pages) Gulf Semiconductor – GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A

1N5400GM THRU 1N5408GM
GLASS PASSIVATED
JUNCTION RECTIFIER
VOLTAGE: 50V to 1000V
CURRENT: 3.0A
FEATURE
Molded case feature for auto insertion
High current capability
Low leakage current
High surge capability
High temperature soldering guaranteed
250°C /10sec/0.375" lead length at 5 lbs tension
Glass Passivated chip
DO - 201AD
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,
for capacitive load, derate current by 20%)
Maximum Recurrent Peak Reverse Voltage
Symbol
Vrrm
1N5 1N5 1N5 1N5 1N5 1N5 1N5 1N5 1N5
400 401 402 403 404 405 406 407 408
GM GM GM GM GM GM GM GM GM
50 100 200 300 400 500 600 800 1000
units
V
Maximum RMS Voltage
Vrms _{35 70 140 210 280 350 420 560 700}
V
Maximum DC blocking Voltage
Vdc
50 100 200 300 400 500 600 800 1000 V
Maximum Average Forward Rectified
If(av)
3.0
Current 3/8" lead length at TL =105°C
A
Peak Forward Surge Current 8.3ms single
Ifsm
half sine-wave superimposed on rated load
125
A
Maximum Instantaneous Forward Voltage at
Vf
rated forward current
1.1
V
Maximum full load reverse current full cycle at _Ir(av)
TL =75°C
30.0
µA
Maximum DC Reverse Current
Ta =25°C
Ir
at rated DC blocking voltage
Ta =100°C
5.0
300.0
µA
Typical Junction Capacitance
(Note 1)
Cj
40
pF
Operating Temperature
(Note 2) Rth(ja)
30
°C/W
Storage and Operating Junction Temperature
Tstg, Tj
-55 to +150
°C
Note:
1. Measured at 1.0 MHz and applied voltage of 4.0Vdc
2. Thermal Resistance from Junction to Ambient at 0.375" lead length, P.C. Board Mounted
Rev.A1
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