1N5400G-E Datasheet, PDF (1/2 Pages) Gulf Semiconductor – GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A

1N5400G-E THRU 1N5408G-E
GLASS PASSIVATED
JUNCTION RECTIFIER
VOLTAGE: 50V to 1000V
CURRENT: 3.0A
FEATURE
Molded case feature for auto insertion
High current capability
Low leakage current
High surge capability
High temperature soldering guaranteed
250°C /10sec/0.375" lead length at 5 lbs tension
Glass Passivated chip
Halogen Free
DO - 201AD
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 Halogen Free Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,
for capacitive load, derate current by 20%)
Maximum Recurrent Peak Reverse Voltage
SYMBOL
Vrrm
1N 1N 1N 1N 1N 1N 1N 1N 1N
540 540 540 540 540 540 540 540 540
0G- 1G- 2G- 3G- 4G- 5G- 6G- 7G- G-
EEEEEEEE
E
50 100 200 300 400 500 600 800 1000
units
V
Maximum RMS Voltage
Vrms
35 70 140 210 280 350 420 560 700 V
Maximum DC blocking Voltage
Vdc
50 100 200 300 400 500 600 800 1000 V
Maximum Average Forward Rectified Current
3/8" lead length at TL =105°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage at
rated forward current
Maximum full load reverse current full cycle at
TL =75°C
Maximum DC Reverse Current
Ta =25°C
at rated DC blocking voltage
Ta =125°C
If(av)
Ifsm
Vf
Ir(av)
Ir
3.0
A
180
A
1.1
V
30.0
µA
5.0
100.0
µA
Typical Junction Capacitance
(Note 1)
Cj
40
pF
Operating Temperature
(Note 2) Rth(ja)
30
°C/W
Storage and Operating Junction Temperature
Tstg, Tj
-55 to +150
°C
Note:
1. Measured at 1.0 MHz and applied voltage of 4.0Vdc
2. Thermal Resistance from Junction to Ambient at 0.375" lead length, P.C. Board Mounted
Rev.A2
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