1N5061 Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SINTERED GLASS JUNCTION AVALANCHE RECTIFIER VOLTAGE：600V to 800V CURRENT: 2.0A

1N5061 THRU 1N5062
SINTERED GLASS JUNCTION
AVALANCHE RECTIFIER
VOLTAGE：600V to 800V
CURRENT: 2.0A
FEATURE
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
SOD-57
MECHANICAL DATA
Case: SOD-57 sintered glass case
Terminal: Plated axial leads solderable per MIL-STD 202E,
method 208C
Polarity: color band denotes cathode end
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8”lead length at Ttp =45°C
Peak Forward Surge Current at t=10ms half sinewave
Maximum Forward Voltage at rated Forward Current
at 1.0A
Maximum DC Reverse Current
at rated DC blocking voltage
Ta =25°C
Ta =165°C
Typical Reverse Recovery Time
(Note 1)
Diode capacitance at0V,1MHz
Typical Thermal Resistance
(Note 2)
Storage and Operating Junction Temperature
V_RRM
V_RMS
V_DC
I_FAV
I_FSM
V_F
I_R
Trr
Cd
R_th(ja)
Tstg, Tj
1N5061
1N5062
600
800
420
560
600
800
2.0
50
1.0
1.0
150.0
3000
50
100
-65 to +175
Note:
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Device mounted on epoxy-glass printed-circuit board, 1.5mm thick
units
V
V
V
A
A
V
µA
nS
pF
K/W
°C
Rev.A1
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