1N4001E Datasheet, PDF (1/2 Pages) Zowie Technology Corporation – SILICON RECTIFIER

1N4001E THRU 1N4007E
GENERAL PURPOSE
PLASTIC RECTIFIER
VOLTAGE:50 TO 1000V
CURRENT: 1.0A
FEATURE
Molded case feature for auto insertion
High current capability
Low leakage current
High surge capability
High temperature soldering guaranteed
250°C/10sec/0.375”lead length at 5 lbs tension
A-405
MECHANICAL DATA
Terminal:Plated axial leads solderable per
MIL-STD 202E, method 208C
Case:Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity:color band denotes cathode
Mounting position:any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,
for capacitive load, derate current by 20%)
SYMBOL 1N4 1N4 1N4 1N4 1N4 1N4 1N4 _units
001E 002E 003E 004E 005E 006E 007E
Maximum Recurrent Peak Reverse Voltage
Vrrm
50 100 _{200 400 600 800 1000} V
Maximum RMS Voltage
Vrms 35 70 _{140 280 420 560 700} V
Maximum DC blocking Voltage
Vdc
50 100 _{200 400 600 800 1000} V
Maximum Average Forward Rectified
Current 3/8”lead length at Ta =75°C
Peak Forward Surge Current 8.3ms single
Half sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage at
rated forward current
Maximum full load reverse current
full cycle at TL =75°C
Maximum DC Reverse Current
at rated DC blocking voltage
Ta =25°C
Ta =100°C
If(av)
Ifsm
Vf
Ir(av)
Ir
1.0
A
30.0
A
1.1
V
30.0
µA
5.0
µA
50.0
µA
Typical Junction Capacitance
(Note 1)
Cj
15.0
pF
Typical Thermal Resistance
(Note 2) R(ja)
50.0
°C/W
Storage and Operation Junction Temperature
Tstg
-50 to +150
°C
Note:
1. Measured at 1.0 MHz and applied voltage of 4.0Vdc
2. Thermal Resistance from Junction to Ambient at 0.375”lead length, P.C. Board Mounted
1
Rev.A6
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