1EDG Datasheet, PDF (1/2 Pages) Gulf Semiconductor – ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE: 200 TO 600V CURRENT: 1.0A

1EDG THRU 1EJG
ULTRAFAST EFFICIENT
GLASS PASSIVATED RECTIFIER
VOLTAGE: 200 TO 600V
CURRENT: 1.0A
FEATURE
R-1
Molded case feature for auto insertion
High current capability
Low leakage current
High surge capability
High temperature soldering guaranteed
250°C /10sec/0.375" lead length at 5 lbs tension
Glass Passivated chip
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,
for capacitive load, derate current by 20%)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8" lead length at Ta =25°C
Peak Forward Surge Current 8.3ms single
Half sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage at
rated forward current
Maximum full load reverse current
full cycle at T_L =75°C
Maximum DC Reverse Current Ta =25°C
at rated DC blocking voltage
Ta =100°C
Typical Junction Capacitance
(Note 1)
Maximum Reverse Recovery Time (Note 2)
Operating Temperature
(Note 3)
Storage and Operation Junction Temperature
SYMBOL
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir(av)
Ir
Cj
Trr
R(ja)
Tstg, Tj
1EDG
200
140
200
1.0
1EGG
400
280
400
1.0
30.0
1.3
50.0
10.0
100.0
15.0
35
50.0
-55 to +150
1EJG
600
420
600
1.8
units
V
V
V
A
A
V
µA
µA
µA
pF
nS
°C /W
°C
Note:
1. Measured at 1.0 MHz and applied voltage of 4.0Vdc
2. Test Condition If =0.5A, Ir =1.0A, Irr =0.25A
3. Thermal Resistance from Junction to Ambient at 0.375" lead length, P.C. Board Mounted
Rev.A4
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