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GSS6900S Datasheet, PDF (3/8 Pages) GTM CORPORATION – DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE
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ISSUED DATE :2006/04/28
REVISED DATE :
CH-2 Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.1
-
V VGS=0, ID=250uA
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 1.0
-
3.0
gfs
-
11
-
V VDS=VGS, ID=250uA
S VDS=10V, ID=9A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25к)
-
-
100 uA VDS=30V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
1
mA VDS=24V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
-
Qgs
-
Qgd
-
Td(on)
-
Tr
-
Td(off)
-
Tf
-
-
22
VGS=10V, ID=9A
m
-
29
VGS=4.5V, ID=7A
25 40
ID=7A
4
-
nC VDS=24V
7
-
VGS=10V
10
-
VDS=20V
6
-
ID=1A
ns VGS=10
26
-
RG=5.7
12
-
RD=20
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
- 1170 1860
VGS=0V
-
205
-
pF VDS=25V
-
142
-
f=1.0MHz
-
1.7
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
21
16
Max.
1.2
-
-
Unit
Test Conditions
V IS=2.6A, VGS=0V
ns IS=7A, VGS=0V
nC dI/dt=100A/ s
Schottky Characteristics @ Tj=25ć(unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Forward Voltage Drop
Max. Reverse Leakage Current
Junction Capacitance
VF
-
0.47 0.5
V IF=1A
IRM
- 0.004 0.2 mA VR=30V
-
0.5
1
mA VR=30V, Tj=100к
CT
-
66
-
pF VR=10V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, tЉ10sec.
GSS4816S
Page: 3/8
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