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GP4565 Datasheet, PDF (3/7 Pages) GTM CORPORATION – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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ISSUED DATE :2006/05/12
REVISED DATE :
P-Channel Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -40
-
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
-0.03
-
V VGS=0, ID=-250uA
V/к Reference to 25к, ID=-1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) -1.0
-
-3.0
gfs
-
10
-
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-6A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25к)
-
-
-1
uA VDS=-40V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-25
uA VDS=-32V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
33
VGS=-10V, ID=-6A
m
-
42
VGS=-4.5V, ID=-4A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
-
20 32
ID=-6A
Qgs
-
4
-
nC VDS=-32V
Qgd
-
10
-
VGS=-4.5V
Td(on)
-
11
-
VDS=-20V
Tr
-
7
-
ID=-1A
ns VGS=-10V
Td(off)
-
67
-
RG=3.3
Tf
-
43
-
RD=20
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1440 2300
VGS=0V
-
250
-
pF VDS=-25V
-
190
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
27
23
Max.
-1.2
-
-
Unit
Test Conditions
V IS=-1.7A, VGS=0V, Tj=25к
ns IS=-6A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Mounted on 1 in2 copper pad of FR4 board; 90к/W when mounted on Min. copper pad.
GP4565
Page: 3/7
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