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| GU9971 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/11/03
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
60
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.05
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 1.0
-
3.0
gfs
-
17
-
V VDS=VGS, ID=250uA
S VDS=10V, ID=18A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25к)
-
-
10
uA VDS=60V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
25
uA VDS=48V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
36
VGS=10V, ID=18A
m
-
50
VGS=4.5V, ID=12A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
-
18 30
ID=18A
Qgs
-
6
-
nC VDS=48V
Qgd
-
11
-
VGS=4.5V
Td(on)
-
9
-
VDS=30V
Tr
-
24
-
ID=18A
ns VGS=10V
Td(off)
-
26
-
RG=3.3
Tf
-
7
-
RD=1.67
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1700 2700
VGS=0V
-
160
-
pF VDS=25V
-
110
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
37
38
Max.
1.2
-
-
Unit
Test Conditions
V IS=25A, VGS=0V
ns IS=18A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthÐ300us, duty cycleÐ2%.
GU9971
Page: 2/4
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