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| GU90T03 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/03/01
REVISED DATE :2005/12/01B
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th)
0.8
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
0.02
-
55
-
-
-
-
-
3.0
-
Í100
1
25
V VGS=0, ID=250uA
V/к Reference to 25к, ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=30A
nA VGS= Í20V
uA VDS=30V, VGS=0
uA VDS=24V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
5
VGS=10V, ID=45A
mÓ¨
-
-
6
VGS=4.5V, ID=30A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
60
96
ID=40A
-
8.5
-
nC VDS=24V
-
38
-
VGS=4.5V
-
14
-
-
83
-
-
66
-
-
120
-
VDS=15V
ID=30A
ns VGS=10V
RG=3.3Ó¨
RD=0.5Ó¨
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 4090 6540
VGS=0V
- 1010 -
pF VDS=25V
-
890
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
51
63
Max.
1.3
-
-
Unit
Test Conditions
V IS=45A, VGS=0V
ns IS=30A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthÐ300us, duty cycleÐ2%.
GU90T03
Page: 2/4
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