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| GU85T08 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/03/08
REVISED DATE :
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
80
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th)
1.0
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
0.09
-
70
-
-
-
-
-
3.0
-
Í100
10
100
V VGS=0, ID=1mA
V/к Reference to 25к, ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=45A
nA VGS= Í20V
uA VDS=80V, VGS=0
uA VDS=64V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
13
VGS=10V, ID=45A
mÓ¨
-
18
VGS=4.5V, ID=25A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
63 100
ID=45A
-
23
-
nC VDS=64V
-
38
-
VGS=4.5V
-
30
-
-
100
-
-
144
-
-
173
-
VDS=40V
ID=45A
ns VGS=10V
RG=10Ó¨
RD=0.89Ó¨
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 6300 10080
VGS=0V
-
670
-
pF VDS=25V
-
350
-
f=1.0MHz
Gate Resistance
Rg
-
1.1 1.7 Ó¨ f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
47
86
Max.
1.3
-
-
Unit
Test Conditions
V IS=45A, VGS=0V
ns IS=20A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthÐ300us, duty cycleÐ2%.
3. Staring Tj=25к, VDD=30V, L=1mH, RG=25Ө, IAS=30A.
GU85T08
Page: 2/4
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