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GU85L02 Datasheet, PDF (2/5 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
◁
ISSUED DATE :2005/12/06
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
25
-
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.037
-
V VGS=0, ID=250uA
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 1.0
-
3.0
gfs
-
45
-
V VDS=VGS, ID=250uA
S VDS=10V, ID=40A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=25V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
25
uA VDS=20V, VGS=0
-
Static Drain-Source On-Resistance RDS(ON)
-
-
6
VGS=10V, ID=40A
m
-
10
VGS=4.5V, ID=20A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
49
-
-
5
-
- 36.5 -
-
12
-
-
85
-
-
35
-
-
110
-
ID=40A
nC VDS=20V
VGS=5V
VDS=15V
ID=25A
ns VGS=10V
RG=3.3
RD=0.6
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1510 -
-
950
-
-
450
-
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.26
85
310
Unit
Test Conditions
V IS=85A, VGS=0V, Tj=25к
A VD=VG=0V, VS=1.26V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthЉ300us, duty cycleЉ2%.
GU85L02
Page: 2/5
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