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GU75N07 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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ISSUED DATE :2006/06/06
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
75
-
-
V VGS=0, ID=1mA
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.08
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 1.0
-
3.0
gfs
-
40
-
V VDS=VGS, ID=250uA
S VDS=10V, ID=40A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25к)
-
-
10
uA VDS=60, VGS=0
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
100 uA VDS=75V, VGS=0
Static Drain-Source On-Resistance RDS(ON) -
-
11
m VGS=10V, ID=40A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
83 130
ID=40A
-
10
-
nC VDS=60V
-
51
-
VGS=4.5V
-
15
-
-
73
-
-
340
-
-
200
-
VDS=40V
ID=30A
ns VGS=10V
RG=10
RD=1.33
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 4270 6830
VGS=0V
-
690
-
pF VDS=25V
-
320
-
f=1.0MHz
Gate Resistance
Rg
-
1.8 2.7
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
90
235
Max.
1.5
-
-
Unit
Test Conditions
V IS=40A, VGS=0V, Tj=25к
ns IS=40A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Starting Tj=25к, VDD=50V, L=1mH, RG=25 , IAS=30A.
GU75N07
Page: 2/4
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