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GU70L02 Datasheet, PDF (2/5 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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ISSUED DATE :2005/03/01
REVISED DATE :2005/12/02B
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
25
-
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.037
-
V VGS=0, ID=250uA
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 1.0
-
3.0
gfs
-
25
-
V VDS=VGS, ID=250uA
S VDS=10V, ID=33A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=25V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
25
uA VDS=20V, VGS=0
-
Static Drain-Source On-Resistance RDS(ON)
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
Input Capacitance
Ciss
-
Output Capacitance
Coss
-
Reverse Transfer Capacitance
Crss
-
-
9
VGS=10V, ID=33A
m
-
18
VGS=4.5V, ID=20A
23
-
ID=33A
3
-
nC VDS=20V
17
-
VGS=5V
8.8
-
95
-
24
-
14
-
VDS=15V
ID=33A
ns VGS=10V
RG=3.3
RD=0.45
790
-
475
-
195
-
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.26
66
210
Unit
Test Conditions
V IS=66A, VGS=0V, Tj=25к
A VD=VG=0V, VS=1.26V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthЉ300us, duty cycleЉ2%.
GU70L02
Page: 2/5
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