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| GU60T03 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/11/22
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.03
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 1.0
-
3.0
gfs
-
25
-
V VDS=VGS, ID=250uA
S VDS=10V, ID=10A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=30V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=175к)
-
-
250 uA VDS=24V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
12
VGS=10V, ID=20A
m
-
25
VGS=4.5V, ID=15A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
- 11.6 19
ID=20A
-
3.9
-
nC VDS=24V
-
7
-
VGS=4.5V
-
8.8
-
- 57.5 -
- 18.5 -
-
6.4
-
VDS=15V
ID=20A
ns VGS=10V
RG=3.3
RD=0.75
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1135 1816
VGS=0V
-
200
-
pF VDS=25V
-
135
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
23.3
16
Max.
1.3
-
-
Unit
Test Conditions
V IS=45A, VGS=0V
ns IS=20A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthÐ300us, duty cycleÐ2%.
GU60T03
Page: 2/4
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