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GU60N03 Datasheet, PDF (2/5 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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ISSUED DATE :2005/01/25
REVISED DATE :2005/10/19B
Electrical Characteristics (Tj = 25к Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.037
-
V VGS=0, ID=250uA
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 1.0
-
3.0
gfs
-
30
-
V VDS=VGS, ID=250uA
S VDS=10V, ID=28A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25к)
-
-
25
uA VDS=30V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
250 uA VDS=24V, VGS=0
- 14.5 16.5
VGS=10V, ID=28A
Static Drain-Source On-Resistance RDS(ON)
m
- 21.5 25
VGS=4.5V, ID=22A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
- 22.4 -
-
2.7
-
-
14
-
-
7.4
-
-
81
-
-
24
-
-
18
-
ID=28A
nC VDS=24V
VGS=5V
VDS=15V
ID=28A
ns VGS=10V
RG=3.3
RD=0.53
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
950
-
-
440
-
-
145
-
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.3
55
215
Unit
Test Conditions
V IS=55A, VGS=0V, Tj=25к
A VD=VG=0V, VS=1.3V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthЉ300us, duty cycleЉ2%.
GU60N03
Page: 2/5
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