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| GU40T03 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/11/22
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.032
-
V VGS=0, ID=250uA
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 1.0
-
3.0
gfs
-
15
-
V VDS=VGS, ID=250uA
S VDS=10V, ID=18A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±25V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=30V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
25
uA VDS=24V, VGS=0
-
Static Drain-Source On-Resistance RDS(ON)
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
Input Capacitance
Ciss
-
Output Capacitance
Coss
-
Reverse Transfer Capacitance
Crss
-
-
25
VGS=10V, ID=18A
m
-
45
VGS=4.5V, ID=14A
8.8
-
ID=18A
2.5
-
nC VDS=20V
5.8
-
VGS=4.5V
6
-
62
-
16
-
4.4
-
VDS=15V
ID=18A
ns VGS=10V
RG=3.3
RD=0.83
655
-
145
-
95
-
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.3
28
95
Unit
Test Conditions
V IS=28A, VGS=0V, Tj=25к
A VD=VG=0V, VS=1.3V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthÐ300us, duty cycleÐ2%.
GU40T03
Page: 2/4
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