 English |
|
|
|
|
|
|
|
| GU20N03 Datasheet, PDF (2/5 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
| |||
| ◁ |
ISSUED DATE :2005/06/28
REVISED DATE :
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th)
1.0
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
-
0.037 -
-
3.0
3
-
- Í100
-
1
-
100
V VGS=0, ID=250uA
V/к Reference to 25к, ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=10A
nA VGS= Í20V
uA VDS=30V, VGS=0
uA VDS=24V, VGS=0
-
Static Drain-Source On-Resistance RDS(ON)
-
-
52
VGS=10V, ID=10A
mÓ¨
-
85
VGS=4.5V, ID=8A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
6.1
-
-
1.4
-
-
4
-
-
4.9
-
-
29
-
-
14.3
-
-
3.6
-
ID=10A
nC VDS=24V
VGS=5V
VDS=15V
ID=20A
ns VGS=10V
RG=3.3Ó¨
RD=0.75Ó¨
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
290
-
-
160
-
-
45
-
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.3
20
58
Unit
Test Conditions
V IS=20A, VGS=0V, Tj=25к
A VD= VG=0V, VS=1.3V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthÐ300us, duty cycleÐ2%.
GU20N03
Page: 2/5
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese