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| GU15P10 Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2006/01/19
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -100
-
-
V VGS=0, ID=-1mA
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
-0.1
-
V/к Reference to 25к, ID=-1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) -1.0
-
-3.0
V VDS=VGS, ID=-250uA
gfs
-
8
-
S VDS=-10V, ID=-9A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25к)
-
-
-25
uA VDS=-100V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
-100 uA VDS=-80V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
-
210 m VGS=-10V, ID=-9A
37 60
ID=-9A
5
-
nC VDS=-80V
15
-
VGS=-10V
11
-
VDS=-50V
25
-
ID=-9A
ns VGS=-10V
56
-
RG=10
36
-
RD=5.6
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1180 1900
VGS=0V
-
250
-
pF VDS=-25V
-
75
-
f=1.0MHz
Gate Resistance
Rg
-
3.6
5
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
95
410
Max.
-1.3
-
-
Unit
Test Conditions
V IS=-9A, VGS=0V
ns IS=-9A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthÐ300us, duty cycleÐ2%.
GU15P10
Page: 2/4
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