 English |
|
|
|
|
|
|
|
| GU08P20 Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
| |||
| ◁ |
ISSUED DATE :2006/01/19
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -200
-
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
-0.03
-
V VGS=0, ID=-250uA
V/к Reference to 25к, ID=-1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) -2.0
-
-4.0
V VDS=VGS, ID=-250uA
gfs
-
4
-
S VDS=-10V, ID=-5A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25к)
-
-
-25
uA VDS=-200V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
-100 uA VDS=-160V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
-
680 m VGS=-10V, ID=-4A
20 32
ID=-5A
5
-
nC VDS=-160V
13
-
VGS=-4.5V
12
-
VDS=-100V
14
-
ID=-5A
ns VGS=-10V
64
-
RG=10
28
-
RD=20
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1210 -
-
170
-
-
45
-
VGS=0V
pF VDS=-25V
f=1.0MHz
Gate Resistance
Rg
-
3.6 5.4
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
165
1420
Max.
-1.3
-
-
Unit
Test Conditions
V IS=-5A, VGS=0V
ns IS=-5A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthÐ300us, duty cycleÐ2%.
GU08P20
Page: 2/4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese